Forming-Free SiGeOx/TiOy Resistive Random Access Memories Featuring Large Current Distribution Windows

Chun-Hu Cheng; Albert Chin; Hsiao-Hsuan Hsu

doi:10.1166/jnn.2019.16781

Forming-Free SiGeO_x/TiO_y Resistive Random Access Memories Featuring Large Current Distribution Windows

J Nanosci Nanotechnol. 2019 Dec 1;19(12):7916-7919. doi: 10.1166/jnn.2019.16781.

Authors

Chun-Hu Cheng¹, Albert Chin², Hsiao-Hsuan Hsu³

Affiliations

¹ Department of Mechatronic Engineering, National Taiwan Normal University, Taipei 10610, Taiwan.
² Department of Electronics Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan.
³ Department of Materials & Mineral Resources Engineering, National Taipei University of Technology, Taipei 10608, Taiwan.

PMID: 31196309
DOI: 10.1166/jnn.2019.16781

Abstract

Optimal device integrity was achieved in Ni/SiGeO_x/TiO_y/TaN resistive memory by using a forming-free switch with a low switching power of 790 μW, stable endurance of 104 cycles, optimal retention time of 105 s, resistance window of at least 1150×, and tight current distributions at 85 °C. These characteristics are attributed to the low current switching obtained using SiGeO_x with a high oxygen vacancy density and highly defective TiO_y grain boundaries.