Investigation of Nitridation on the Band Alignment at MoS2/HfO2 Interfaces

Ya-Wei Huan; Wen-Jun Liu; Xiao-Bing Tang; Xiao-Yong Xue; Xiao-Lei Wang; Qing-Qing Sun; Shi-Jin Ding

doi:10.1186/s11671-019-3020-0

Investigation of Nitridation on the Band Alignment at MoS₂/HfO₂ Interfaces

Nanoscale Res Lett. 2019 May 29;14(1):181. doi: 10.1186/s11671-019-3020-0.

Authors

Ya-Wei Huan¹, Wen-Jun Liu², Xiao-Bing Tang¹, Xiao-Yong Xue³, Xiao-Lei Wang⁴, Qing-Qing Sun¹, Shi-Jin Ding¹

Affiliations

¹ State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
² State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China. wjliu@fudan.edu.cn.
³ State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China. xuexiaoyong@fudan.edu.cn.
⁴ Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.

Abstract

The effect of nitridation treatment on the band alignment between few-layer MoS₂ and HfO₂ has been investigated by X-ray photoelectron spectroscopy. The valence (conduction) band offsets of MoS₂/HfO₂ with and without nitridation treatment were determined to be 2.09 ± 0.1 (2.41 ± 0.1) and 2.34 ± 0.1 (2.16 ± 0.1) eV, respectively. The tunable band alignment could be attributed to the Mo-N bonding formation and surface band bending for HfO₂ triggered by nitridation. This study on the energy band engineering of MoS₂/HfO₂ heterojunctions may also be extended to other high-k dielectrics for integrating with two-dimensional materials to design and optimize their electronic devices.

Keywords: Band alignment; Few-layer MoS2; Nitridation treatment.

Abstract

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