In this paper, we demonstrate a trilayer hybrid terahertz (THz) modulator made by combining a p-type silicon (p-Si) substrate, TiO2 interlayer, and single-layer graphene. The interface between Si and TiO2 introduced a built-in electric field, which drove the photoelectrons from Si to TiO2, and then the electrons injected into the graphene layer, causing the Fermi level of graphene to shift into a higher conduction band. The conductivity of graphene would increase, resulting in the decrease of transmitted terahertz wave. And the terahertz transmission modulation was realized. We observed a broadband modulation of the terahertz transmission in the frequency range from 0.3 to 1.7 THz and a large modulation depth of 88% with proper optical excitation. The results show that the graphene/TiO2/p-Si hybrid nanostructures exhibit great potential for terahertz broadband applications, such as terahertz imaging and communication.
Keywords: Broadband modulation; Built-in electric field; Single-layer graphene; THz modulator; TiO2 interlayer.