A gated Schottky diode with a field-plate structure is proposed and investigated as a new low-power synaptic device to suppress the forward current of the Schottky diode. In a hardware-based neural network, unwanted forward current can flow through gated Schottky diode-type synaptic devices during integration operations, possibly causing a malfunction of the neural network and increasing the power consumption. By adopting a field-plate structure, a virtual pn junction to suppress the forward current of the Schottky diode is formed in the poly-Si active layer. As a result, the unwanted forward current of the gated Schottky diode is successfully reduced to less than 1 pA/µm.