Tunnel Field Effect Transistor with Ferroelectric Gate Insulator

Kitae Lee; Junil Lee; Sihyun Kim; Euyhwan Park; Ryoongbin Lee; Hyun-Min Kim; Sangwan Kim; Byung-Gook Park

doi:10.1166/jnn.2019.16994

Tunnel Field Effect Transistor with Ferroelectric Gate Insulator

J Nanosci Nanotechnol. 2019 Oct 1;19(10):6095-6098. doi: 10.1166/jnn.2019.16994.

Authors

Kitae Lee¹, Junil Lee¹, Sihyun Kim¹, Euyhwan Park¹, Ryoongbin Lee¹, Hyun-Min Kim¹, Sangwan Kim², Byung-Gook Park¹

Affiliations

¹ Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea.
² Department of Electrical and Computer Engineering, Ajou University, Suwon 16449, Republic of Korea.

PMID: 31026915
DOI: 10.1166/jnn.2019.16994

Abstract

Ferroelectric tunnel field effect transistor (Fe-TFET) having improved DC performance in comparison to the conventional TFET (c-TFET) is proposed and investigated through the technology computer-aided design (TCAD) simulation. By inserting ferroelectric material into the gate insulator of TFET, enhanced on-current (I_on) is obtained. It is attributed to the polarization characteristic of the ferroelectric materials which brings the capacitance boosting effect. Through the TCAD simulation, the characteristics of the ferroelectric material for the optimal performance conditions are also studied.