Low-Voltage Metal-Oxide Thin Film Transistors Using P-Type Tin-Oxide Semiconductors

Y L Chen; G L Liou; H H Hsu; P C Chen; Z W Zheng; Y H Wu; C H Cheng; C H Liu; L H Chung

doi:10.1166/jnn.2019.16563

Low-Voltage Metal-Oxide Thin Film Transistors Using P-Type Tin-Oxide Semiconductors

J Nanosci Nanotechnol. 2019 Sep 1;19(9):5619-5623. doi: 10.1166/jnn.2019.16563.

Authors

Y L Chen¹, G L Liou¹, H H Hsu², P C Chen³, Z W Zheng⁴, Y H Wu³, C H Cheng¹, C H Liu¹, L H Chung¹

Affiliations

¹ Department of Mechatronic Engineering, National Taiwan Normal University, Taipei 10610, Taiwan.
² Department of Materials & Mineral Resources Engineering, National Taipei University of Technology, Taipei 10608, Taiwan.
³ Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan.
⁴ Department of Electronic Engineering, Xiamen University, Xiamen 361005, China.

PMID: 30961716
DOI: 10.1166/jnn.2019.16563

Abstract

In this paper, the effect of channel annealing and oxygen flow rate in P-type tin-monoxide (SnO) thin film transistor (TFT) was investigated to reach the process compatibility with n-type oxide-based TFT. The optimized P-type SnO TFT with a small threshold voltage of -0.1 V, a high field-effect mobility of 4 cm² V^-1 s^-1 and an on/off current ratio of >10² was proposed. From the experimental results, the 150 °C channel annealing revealed a metallic behavior but a semiconductor-like property at a higher 200 °C that was favorable for transistor rectification. Besides, the higher oxygen flow rate was also helpful for improving device mobility and driving current, but shows a slight increase in off-state leakage, which is unavoidable due to the increase of grain in SnO channel.