Beating the exclusion rule against the coexistence of robust luminescence and ferromagnetism in chalcogenide monolayers

Hengli Duan; Peng Guo; Chao Wang; Hao Tan; Wei Hu; Wensheng Yan; Chao Ma; Liang Cai; Li Song; Wenhua Zhang; Zhihu Sun; Linjun Wang; Wenbo Zhao; Yuewei Yin; Xiaoguang Li; Shiqiang Wei

doi:10.1038/s41467-019-09531-0

Beating the exclusion rule against the coexistence of robust luminescence and ferromagnetism in chalcogenide monolayers

Nat Commun. 2019 Apr 5;10(1):1584. doi: 10.1038/s41467-019-09531-0.

Authors

Hengli Duan¹, Peng Guo¹, Chao Wang², Hao Tan¹, Wei Hu¹, Wensheng Yan³, Chao Ma⁴, Liang Cai¹, Li Song¹, Wenhua Zhang¹, Zhihu Sun⁵, Linjun Wang⁶, Wenbo Zhao⁷, Yuewei Yin⁷, Xiaoguang Li⁷, Shiqiang Wei⁸

Affiliations

¹ National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230029, Hefei, Anhui, China.
² Key Laboratory of Neutronics and Radiation Safety, Institute of Nuclear Energy Safety Technology, Chinese Academy of Sciences, 230031, Hefei, Anhui, China.
³ National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230029, Hefei, Anhui, China. ywsh2000@ustc.edu.cn.
⁴ College of Materials Science and Engineering, Hunan University, 410082, Changsha, Hunan, China.
⁵ National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230029, Hefei, Anhui, China. zhsun@ustc.edu.cn.
⁶ Center for Micro- and Nanoscale Research and Fabrication, University of Science and Technology of China, 230029, Hefei, Anhui, China.
⁷ Hefei National Laboratary for Physical Sciences at the Microscale, Department of Physics, and CAS Key Laboratory of Strongly-coupled Quantum Matter Physics, University of Science and Technology of China, 230026, Hefei, Anhui, China.
⁸ National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230029, Hefei, Anhui, China. sqwei@ustc.edu.cn.

Abstract

Monolayer chalcogenide semiconductors with both luminescent and ferromagnetic properties are dreamed for simultaneous polarization and detection of the valley degree of freedom in valleytronics. However, a conventional chalcogenide monolayer lacks these coexisting properties due to their mutually exclusive origins. Herein we demonstrate that robust ferromagnetism and photoluminescence (PL) could be achieved in a (Co, Cr)-incorporated single monolayer MoS₂, where the ferromagnetic interaction is activated by Co ions, and the nonradiative recombination channels of excitons is cut off by Cr ions. This strategy brings a 90-fold enhancement of saturation magnetization and 35-fold enhancement of PL intensity than the pristine MoS₂ monolayer. The main reasons for the coexisting ferromagnetism and PL are the electronic interactions between the impurity bands of atop Cr adatoms and substitutional Co atoms, as well as the increased content of neutral exciton. Our findings could extend the applications of two-dimensional chalcogenides into spintronics, valleytronic and photoelectric devices.

Publication types

Research Support, Non-U.S. Gov't