Doped Manipulation of Photoluminescence and Carrier Lifetime from CH3NH3PbI3 Perovskite Thin Films

ACS Appl Mater Interfaces. 2019 May 1;11(17):16174-16180. doi: 10.1021/acsami.9b01506. Epub 2019 Apr 17.

Abstract

The compositional doping techniques can delicately tune the band gap, carrier concentration, and mobility of perovskites to optimize the photoelectric properties of materials. It is reported that the doped perovskites have been widely researched in the photovoltaic and photoelectronic field. Here, we show that the photoluminescence intensity and carrier lifetime of CH3NH3PbI3 films have been improved by 3 orders of magnitude by incorporating abundant MnAc2·4H2O in the perovskite precursor solution, which benefits from the morphological change and surface passivation induced by hydration water and surface manganese acetate. We also witness the increased photoluminescence quantum yield for film and the changed power conversion efficiency for perovskite solar cells. More importantly, the enhanced chemical stability of perovskite is displayed by immersing films into the water.

Keywords: MnAc2 insertion; carrier lifetime; perovskite; photoluminescence; surface passivation.