Chemical Vapor Deposition of Vertically Aligned Carbon Nanotube Arrays: Critical Effects of Oxide Buffer Layers

Nanoscale Res Lett. 2019 Mar 21;14(1):106. doi: 10.1186/s11671-019-2938-6.

Abstract

Vertically aligned carbon nanotubes (VACNTs) were synthesized on different oxide buffer layers using chemical vapor deposition (CVD). The growth of the VACNTs was mainly determined by three factors: the Ostwald ripening of catalyst nanoparticles, subsurface diffusion of Fe, and their activation energy for nucleation and initial growth. The surface roughness of buffer layers largely influenced the diameter and density of catalyst nanoparticles after annealing, which apparently affected the lifetime of the nanoparticles and the thickness of the prepared VACNTs. In addition, the growth of the VACNTs was also affected by the deposition temperature, and the lifetime of the catalyst nanoparticles apparently decreased when the deposition temperature was greater than 600 °C due to their serious Ostwald ripening. Furthermore, in addition to the number of catalyst nanoparticles, the density of the VACNTs was also largely dependent on their activation energy for nucleation and initial growth.

Keywords: Atomic layer deposition; Chemical vapor deposition; Oxide buffer layers; Vertically aligned carbon nanotubes.