The strong light-matter interaction in monolayer transition metal dichalcogenides (TMDs) is promising for nanoscale optoelectronics with their direct band gap nature and the ultrafast radiative decay of the strongly bound excitons these materials host. However, the impeded amount of light absorption imposed by the ultrathin nature of the monolayers impairs their viability in photonic applications. Using a layered heterostructure of a monolayer TMD stacked on top of strongly absorbing, nonluminescent, multilayer SnSe2, we show that both single-photon and two-photon luminescence from the TMD monolayer can be enhanced by a factor of 14 and 7.5, respectively. This is enabled through interlayer dipole-dipole coupling induced nonradiative Förster resonance energy transfer (FRET) from SnSe2 underneath, which acts as a scavenger of the light unabsorbed by the monolayer TMD. The design strategy exploits the near-resonance between the direct energy gap of SnSe2 and the excitonic gap of monolayer TMD, the smallest possible separation between donor and acceptor facilitated by van der Waals heterojunction, and the in-plane orientation of dipoles in these layered materials. The FRET-driven uniform single- and two-photon luminescence enhancement over the entire junction area is advantageous over the local enhancement in quantum dot or plasmonic structure integrated 2D layers and is promising for improving quantum efficiency in imaging, optoelectronic, and photonic applications.
Keywords: Förster resonance energy transfer (FRET); MoS2; SnSe2; WS2; charge transfer; photoluminescence enhancement; two-photon luminescence; van der Waals heterostructure.