Electrical and Optical Properties of a Transparent Conductive ITO/Ga₂O₃/Ag/Ga₂O₃ Multilayer for Ultraviolet Light-Emitting Diodes

Siwei Liang; Quanbin Zhou; Xianhui Li; Ming Zhong; Hong Wang

doi:10.3390/nano9030403

Electrical and Optical Properties of a Transparent Conductive ITO/Ga₂O₃/Ag/Ga₂O₃ Multilayer for Ultraviolet Light-Emitting Diodes

Nanomaterials (Basel). 2019 Mar 10;9(3):403. doi: 10.3390/nano9030403.

Authors

Siwei Liang^{1

2}, Quanbin Zhou^{3

4}, Xianhui Li^{5

6}, Ming Zhong^{7

8}, Hong Wang^{9

10

11}

Affiliations

¹ Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, China. phswliang@foxmail.com.
² Engineering Laboratory for Wide Band gap Semiconductor Materials and Devices of Guangdong Province, School of Electronics and Information Engineering, South China University of Technology, Guangzhou 510640, China. phswliang@foxmail.com.
³ Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, China. zhouquanbin86@163.com.
⁴ Engineering Laboratory for Wide Band gap Semiconductor Materials and Devices of Guangdong Province, School of Electronics and Information Engineering, South China University of Technology, Guangzhou 510640, China. zhouquanbin86@163.com.
⁵ Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, China. lxh0303@outlook.com.
⁶ Engineering Laboratory for Wide Band gap Semiconductor Materials and Devices of Guangdong Province, School of Electronics and Information Engineering, South China University of Technology, Guangzhou 510640, China. lxh0303@outlook.com.
⁷ Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, China. jzryzhong@foxmail.com.
⁸ Engineering Laboratory for Wide Band gap Semiconductor Materials and Devices of Guangdong Province, School of Electronics and Information Engineering, South China University of Technology, Guangzhou 510640, China. jzryzhong@foxmail.com.
⁹ Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510640, China. phhwang@scut.edu.cn.
¹⁰ Engineering Laboratory for Wide Band gap Semiconductor Materials and Devices of Guangdong Province, School of Electronics and Information Engineering, South China University of Technology, Guangzhou 510640, China. phhwang@scut.edu.cn.
¹¹ Zhongshan Institute of Modern Industrial Technology, South China University of Technology, Zhongshan 528437, China. phhwang@scut.edu.cn.

Abstract

We fabricated an indium tin oxide (ITO)/Ga₂O₃/Ag/Ga₂O₃ multilayer as a transparent conductive electrode for ultraviolet light-emitting diodes (UV LEDs). The electrical and optical properties of the multilayer were improved by optimizing the annealing temperature of the ITO contact layer and the whole ITO/Ga₂O₃/Ag/Ga₂O₃ multilayer, and the thickness of the ITO contact layer and Ag metal layer. After optimization, the sheet resistance and transmittance of the ITO/Ga₂O₃/Ag/Ga₂O₃ multilayer was 3.43 Ω/sq and 86.4% at 335 nm, respectively. The ITO/Ga₂O₃/Ag/Ga₂O₃ multilayer also exhibited a good ohmic contact characteristic with a specific contact resistance of 1.45×10^-3 Ω·cm². These results show that the proposed ITO/Ga₂O₃/Ag/Ga₂O₃ multilayer is a promising alternative as a p-type electrode for UV LEDs.

Keywords: Ga2O3; UV LEDs; sheet resistance; transmittance; transparent conductive electrode.

Abstract

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