Micro-Hall Sensors Based on Two-Dimensional Molybdenum Diselenide

Abdelkader Abderrahmane; Jong-Min Oh; Nam-Hoon Kim; Pil Ju Ko; Adarsh Sandhu

doi:10.1166/jnn.2019.16266

Micro-Hall Sensors Based on Two-Dimensional Molybdenum Diselenide

J Nanosci Nanotechnol. 2019 Jul 1;19(7):4330-4332. doi: 10.1166/jnn.2019.16266.

Authors

Abdelkader Abderrahmane¹, Jong-Min Oh², Nam-Hoon Kim³, Pil Ju Ko³, Adarsh Sandhu⁴

Affiliations

¹ Division Microélectronique et Nanotechnologie, Centre de Développement des Technologies Avancées (CDTA), Cité 20 août 1956 Baba Hassen, Algier, Algeria.
² Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Republic of Korea.
³ Department of Electrical Engineering, Chosun University, 375, Seosuk-dong, Dong-gu, Gwangju 501-759, Republic of Korea.
⁴ Department of Engineering Science, The University of Electro-Communications (UEC) 1-5-1 Chofugaoka Chofu, 182-8585, Tokyo, Japan.

PMID: 30765015
DOI: 10.1166/jnn.2019.16266

Abstract

Sensors and electronic devices based on semiconductors in their two-dimensional forms have many advantages. In this paper, we studied micro-Hall sensors based on two-dimensional molybdenum diselenide for the first time. The micro-Hall sensor based on a Ti/MoSe₂/Ti structure clearly showed a linear dependence of the Hall voltage as a function of the magnetic field, with a magnetic sensitivity of ∼16 V/AT. The magnetic sensitivity was higher in the Au/MoSe₂/Au structure, with a maximum value of ∼120 V/AT at a bias current of 100 mA; the minimum detectable magnetic field was found to be 1.45 μT/Hz^1/2 at the same current value, making our new micro-Hall sensor a very good candidate for magnetic sensing applications.