Oxidation Behavior of Ti-Al-Si-N-O Nanocomposite Films Deposited by Filtered Arc Ion Plating Technique

Sungbo Heo; Myungsup Lee; Hyundong Kim; Wang Ryeol Kim; Jun-Ho Kim; In-Wook Park; Daeil Kim

doi:10.1166/jnn.2019.16274

Oxidation Behavior of Ti-Al-Si-N-O Nanocomposite Films Deposited by Filtered Arc Ion Plating Technique

J Nanosci Nanotechnol. 2019 Jul 1;19(7):4195-4198. doi: 10.1166/jnn.2019.16274.

Authors

Sungbo Heo¹, Myungsup Lee², Hyundong Kim¹, Wang Ryeol Kim¹, Jun-Ho Kim¹, In-Wook Park¹, Daeil Kim³

Affiliations

¹ Korea Institute of Industrial Technology, Yangsan 50635, South Korea.
² School of Materials Science and Engineering, Pusan National University, Busan 46241, South Korea.
³ School of Materials Science and Engineering, University of Ulsan, Ulsan 44610, South Korea.

PMID: 30764992
DOI: 10.1166/jnn.2019.16274

Abstract

Oxidation behavior of nanocomposite films is very important characteristics for application of machining and cutting tools. In this study, Ti-Al-Si-N-O nanocomposite films were fabricated onto WC-Co and Si wafer substrates. The composition of the Ti-Al-Si-N-O films was analyzed by X-ray photo-electron spectroscope (XPS). Also X-ray diffactometer (XRD) analysis was conducted to investigate the crystallinity and phase transformation of the films. As a result of XRD, Ti-Al(18 at.%)-Si-N-O films showed the great oxidation resistance of 950 °C for 30 min in air. Based on glow discharge optical emission spectroscopy (GDOES) depth profiles, Ti-Al(18 at.%)- Si-N-O film annealed at 950 °C for 30 min shows formation of aluminum oxide layer on the film surface. On the other hand, Ti-Al(7.56 at.%)-Si-N-O film had a titanium oxide layer on the surface after annealing at 950 °C for 30 min.