In this article, physical characteristics of porous silicon (PS) obtained by electro chemical etching using HAuCl4 in the electrolyte are described. The morphological and optical features of PS decorated with gold-nanoparticles (AuNPs) were analyzed in function of the chemical etching time. The insertion of AuNPs inside the PS were performed simultaneously with the formation of the porous silicon layer. Scanning electron microscopy (SEM) analysis showed the formation and incorporation of AuNPs with an average size of 20 nm in the PS structure, which has a pore size of 1.5 μm. Also, it was possible to observe the loss of Si in function of the etching time. Photoluminescence spectroscopy analysis shows a decreasing of the PL intensity, which can be related to the presence of oxygen in the samples. Raman spectroscopy was used to estimate the size of the Si nanocrystals in the PS structure, which suffers a reduction in size due to the presence of HAuCl4 in the electrolyte.