Vertically oriented multilayered MoS2 nanosheets were successfully grown on p-GaN nanorod substrate using chemical vapor deposition (CVD) method. The p-GaN nanorod substrate was fabricated by dry etching employing self-assembled nickel (Ni) nanopartical as mask. Photoluminescence (PL) and Raman characterizations demonstrate the multilayered structure of MoS2 nanosheet growth on p-GaN nanorods as compared with the referential monolayer MoS2 on GaN wafer substrate under the same growth procedure. The growth model of vertical MoS2 nanosheet formed on GaN nanorods is evidently proposed according to the first-principle calculations. More importantly, it is demonstrated here that the as-grown vertical MoS2 nanosheets/p-GaN nanorod heterostructure holds promising applications in photodetector device, where high optical gain and broad spectral response in the visible range have been obtained.
Keywords: GaN nanorods; chemical vapor deposition (CVD); first- principle calculation; photodetector; vertical MoS2 nanosheets.