A laser tuned tunneling detection is observed in SiO2(50nm)/p-Si/SiO2 structure. In comparison of dark condition, the tunneling current get amplified considerably over 250 times when irradiated with a low intensity laser (5mW) directly on the oxide layers. This huge amplified tunneling is unusual and rarely seen. Interestingly, this amplified tunneling effect is of position-dependent, and has a wide adjustment scope (centimeter level). Different from the traditional tunneling effect, where tremendous research efforts were directed only towards the influence of applied voltage or magnetic field, we demonstrate that this laser tuned amplifying process strongly associates with the interface states existing at SiO2/p-Si interface. These interface states can largely collect the light-induced careers and regulate its diffusion in a controllable manner. This work, for the first time, unambiguously demonstrate a novel tunneling detection based on the interface states, suggesting a new approach for light and position sensitive tunneling devices.