A porous Si segment in a Si nanowire (NW), when exposed to light, generates a current with a high on/off ratio. This unique feature has been recently used to demonstrate photon-triggered NW devices including transistors, logic gates, and photodetection systems. Here, we develop a reliable and simple procedure to fabricate porous Si segments in chemically synthesized Si NWs for photon-triggered current generation. To achieve this, we employ 100 nm-diameter chemical-vapor-deposition grown Si NWs that possess an n-type high doping level and extremely smooth surface. The NW regions uncovered by electron-beam resist become selectively porous through metal-assisted chemical etching, using Ag nanoparticles as a catalyst. The contact electrodes are then fabricated on both ends of such NWs, and the generated current is measured when the laser is focused on the porous Si segment. The current level is changed by controlling the power of the incident laser and bias voltage. The on/off ratio is measured up to 1.5 × 104 at a forward bias of 5 V. In addition, we investigate the porous-length-dependent responsivity of the NW device with the porous Si segment. The responsivity is observed to decrease for porous segment lengths beyond 360 nm. Furthermore, we fabricate nine porous Si segments in a single Si NW and measure the identical photon-triggered current from each porous segment; this single NW device can function as a high-resolution photodetection system. Therefore, our fabrication method to precisely control the position and length of the porous Si segments opens up new possibilities for the practical implementation of programmable logic gates and ultrasensitive photodetectors.
Keywords: Photon-triggered current; chemical synthesis; photodetector; porous silicon; silicon nanowire.