RTN and Annealing Related to Stress and Temperature in FIND RRAM Array

Chih Yuan Chen; Chrong Jung Lin; Ya-Chin King

doi:10.1186/s11671-018-2846-1

RTN and Annealing Related to Stress and Temperature in FIND RRAM Array

Nanoscale Res Lett. 2019 Jan 8;14(1):12. doi: 10.1186/s11671-018-2846-1.

Authors

Chih Yuan Chen¹, Chrong Jung Lin², Ya-Chin King²

Affiliations

¹ Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan. crazy9bjd@gmail.com.
² Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan.

Abstract

In this work, an observation on random telegraph noise (RTN) signal in the read current of a FinFET dielectric RRAM (FIND RRAM) device is presented. The RTN signal of a FIND RRAM cell is found to change after the device being subjected to cycling stress. After undergoing cycling stress, RRAM cells have a stronger tendency to show more frequent and intense RTN signals. The increase of noise levels in FIND RRAM cells can be alleviated generally by high temperature anneal, and with this concept, an on chip annealing scheme is proposed and demonstrated.

Keywords: Advanced FinFET technology; Anneal; RRAM; Random telegraph noise.