The piezoresistive pressure sensor, a kind of widely investigated artificial device to transfer force stimuli to electrical signals, generally consists of one or more kinds of conducting materials. Here, a highly sensitive pressure sensor based on the semiconductor/conductor interface piezoresistive effect is successfully demonstrated by using organic transistor geometry. Because of the efficient combination of the piezoresistive effect and field-effect modulation in a single sensor, this pressure sensor shows excellent performance, such as high sensitivity (514 kPa-1 ), low limit of detection, short response and recovery time, and robust stability. More importantly, the unique gate modulation effect in the transistor endows the sensor with an unparalleled ability-tunable sensitivity via bias conditions in a single sensor, which is of great significance for applications in complex pressure environments. The novel working principle and high performance represent significant progress in the field of pressure sensors.
Keywords: field-effect; piezoresistive effect; pressure sensors; transistors; tunable sensitivity.
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.