Synthesis of Two-Dimensional Alloy Ga0.84In0.16Se Nanosheets for High-Performance Photodetector

Miaomiao Yu; Hang Li; He Liu; Fanglu Qin; Feng Gao; Yunxia Hu; Mingjin Dai; Lifeng Wang; Wei Feng; PingAn Hu

doi:10.1021/acsami.8b15317

Synthesis of Two-Dimensional Alloy Ga_0.84In_0.16Se Nanosheets for High-Performance Photodetector

ACS Appl Mater Interfaces. 2018 Dec 19;10(50):43299-43304. doi: 10.1021/acsami.8b15317. Epub 2018 Dec 5.

Authors

Miaomiao Yu¹, Hang Li², He Liu¹, Fanglu Qin¹, Feng Gao³, Yunxia Hu³, Mingjin Dai³, Lifeng Wang⁴, Wei Feng¹, PingAn Hu³

Affiliations

¹ Department of Chemistry and Chemical Engineering, College of Science , Northeast Forestry University , Harbin , 150040 , China.
² Innovation Lab of Space Robot System, Space Robotics Engineering Center, Changchun Institute of Optics, Fine Mechanics and Physics , Chinese Academy of Sciences , Changchun 130033 , China.
³ Key Lab of Microsystem and Microstructure of Ministry of Education , Harbin Institute of Technology , Harbin 150080 , China.
⁴ Institute for Frontier Materials , Deakin University , 75 Pigdons Road , Waurn Ponds, Geelong, Victoria 3216 , Australia.

PMID: 30507146
DOI: 10.1021/acsami.8b15317

Abstract

The electronic and optoelectronic properties of 2D alloy Ga_0.84In_0.16Se were investigated for the first time. 2D Ga_0.84In_0.16Se FETs show p-type conduction behaviors. 2D Ga_0.84In_0.16Se photodetectors show high photoresponse in the visible light range of 500 to 700 nm. The responsivity value is 258 A/W for alloy photodetector (500 nm illumination), and it is 92 times and 20 times higher than those of 2D GaSe and InSe photodetectors, respectively. Moreover, the alloy photodetector exhibits good photoresponse stability and rapid photoresponse time. Our results demonstrate that 2D alloy Ga_0.84In_0.16Se has great potential for application in photodetection and sensor devices.

Keywords: Ga0.84In1.86Se; III−VI group semiconductors; alloy engineering; photodetectors; two-dimensional materials.