Electron Beam Irradiated Al Doped ZnO Thin Films as Efficient Tunnel Recombination Junction for Hydrogenated Amorphous Silicon/Cu(In,Ga)Se₂ Tandem Solar Cells

Sunhwa Lee; Chae-Woong Kim; Youn-Jung Lee; Jinjoo Park; Youngkuk Kim; Chaehwan Jeong; Junsin Yi

doi:10.1166/jnn.2019.16259

Electron Beam Irradiated Al Doped ZnO Thin Films as Efficient Tunnel Recombination Junction for Hydrogenated Amorphous Silicon/Cu(In,Ga)Se₂ Tandem Solar Cells

J Nanosci Nanotechnol. 2019 Mar 1;19(3):1480-1484. doi: 10.1166/jnn.2019.16259.

Authors

Sunhwa Lee¹, Chae-Woong Kim², Youn-Jung Lee¹, Jinjoo Park¹, Youngkuk Kim¹, Chaehwan Jeong³, Junsin Yi¹

Affiliations

¹ School of Information and Communication Engineering, Sungkyunkwan University, Suwon 16419, Korea.
² R&D Center, ISAC Research Inc, Daejeon 34036, Korea.
³ Applied Optics and Energy R&BD Group, Korea Institute of Industrial Technology, Gwangju 61012, Korea.

PMID: 30469209
DOI: 10.1166/jnn.2019.16259

Abstract

A tunnel recombination junction (TRJ) layer for hydrogenated amorphous silicon (a-Si:H)/ Cu(In,Ga)Se₂ (CIGS) tandem solar cells is investigated. An Al-doped zinc oxide (AZO) thin film is applied to the TRJ, and the influence of electron beam (e-beam) irradiation on defects along the TRJ is investigated. The AZO thin films are prepared using radio frequency (RF) sputtering and the e-beam is irradiated at 200 W RF power and 2 keV DC power for 5 min. In the e-beam irradiated AZO thin film, the number of oxygen vacancies and Zn interstitials increases, which in turn strengthens the effect of defect-enhanced tunnel recombination.