Radiative recombination in narrow gap HgTe/CdHgTe quantum well heterostructures for laser applications

V Ya Aleshkin; A A Dubinov; V V Rumyantsev; M A Fadeev; O L Domnina; N N Mikhailov; S A Dvoretsky; F Teppe; V I Gavrilenko; S V Morozov

doi:10.1088/1361-648X/aaebf5

Radiative recombination in narrow gap HgTe/CdHgTe quantum well heterostructures for laser applications

J Phys Condens Matter. 2018 Dec 12;30(49):495301. doi: 10.1088/1361-648X/aaebf5.

Authors

V Ya Aleshkin¹, A A Dubinov, V V Rumyantsev, M A Fadeev, O L Domnina, N N Mikhailov, S A Dvoretsky, F Teppe, V I Gavrilenko, S V Morozov

Affiliation

¹ Institute for Physics of Microstructures of RAS, 603950, Nizhny Novgorod, Russia. Lobachevsky State University of Nizhny Novgorod, 603950, Nizhny Novgorod, Russia.

PMID: 30457115
DOI: 10.1088/1361-648X/aaebf5

Abstract

Radiative recombination is studied in CdHgTe/HgTe QWs with bandgap in the 40-140 meV range using four-band Kane model. Calculated radiative lifetimes agree well with the photoconductivity kinetics measurements. We show that the side maxima in the valence band hinder the radiative recombination at high carrier concentrations and discuss how to overcome this effect for the development of long-wavelength lasers.