Transition metal dichalcogenides (TMDs) have attracted much attention due to their promising optical, electronic, magnetic, and catalytic properties. Engineering the defects in TMDs represents an effective way to achieve novel functionalities and superior performance of TMDs devices. However, it remains a significant challenge to create defects in TMDs in a controllable manner or to correlate the nature of defects with their functionalities. In this work, taking single-layer MoS2 as a model system, defects with controlled densities are generated by 500 keV Au irradiation with different ion fluences, and the generated defects are mostly S vacancies. We further show that the defects introduced by ion irradiation can significantly affect the properties of the single-layer MoS2, leading to considerable changes in its photoluminescence characteristics and electrocatalytic behavior. As the defect density increases, the characteristic photoluminescence peak of MoS2 first blueshifts and then redshifts, which is likely due to the electron transfer from MoS2 to the adsorbed O2 at the defect sites. The generation of the defects can also strongly improve the hydrogen evolution reaction activity of MoS2, attributed to the modified adsorption of atomic hydrogen at the defects.
Keywords: MoS2; PL; Raman; defect engineering; ion beam.