Solution-Liquid-Solid Growth of CuInTe2 and CuInSe xTe2- x Semiconductor Nanowires

Guanwei Jia; Jiang Du

doi:10.1021/acs.inorgchem.8b02779

Solution-Liquid-Solid Growth of CuInTe₂ and CuInSe _xTe_{2- x} Semiconductor Nanowires

Inorg Chem. 2018 Dec 3;57(23):14961-14966. doi: 10.1021/acs.inorgchem.8b02779. Epub 2018 Nov 9.

Authors

Guanwei Jia¹, Jiang Du^{2

3}

Affiliations

¹ School of Physics and Electronics , Henan University , Kaifeng 475004 , People's Republic of China.
² Henan Province Industrial Technology Research Institute of Resources and Materials , Zhengzhou University , Zhengzhou 450001 , People's Republic of China.
³ Department of Chemical Engineering, Texas Materials Institute, Center for Nano- and Molecular Science and Technology , The University of Texas at Austin , Austin , Texas 78712 , United States.

PMID: 30411876
DOI: 10.1021/acs.inorgchem.8b02779

Abstract

Ternary CuInTe₂ and quaternary CuInSe _xTe_{2- x} nanowires were successfully synthesized for the first time by a solution-liquid-solid (SLS) mechanism. Crystalline, straight, and nearly stoichiometric CuInTe₂ and CuInSe _xTe_{2- x} nanowires were readily achieved by using the molecular precursors and in the presence of molten Bi nanoparticles and coordinating capping ligands. The temperature and reactant order-of-addition of this reaction strongly affected the composition of the reaction product and the morphology obtained. These CuInTe₂ and CuInSe _xTe_{2- x} nanowires are outstanding light absorbers from the near-IR through the visible and ultraviolet spectral regions and, thereby, comprise new soluble and machinable "building blocks" for applications in solar-light utilization.