This paper presents an in-plane sandwich nano-g microelectromechanical systems (MEMS) accelerometer. The proof-mass fabrication is based on silicon etching through technology using inductive coupled plasma (ICP) etching. The capacitive detection system, which employs the area-changing sensing method, combines elementary capacitive pickup electrodes with periodic-sensing-array transducers. In order to achieve a large dynamic range with an ultrahigh resolution, the capacitive detection system employs two periodic-sensing-array transducers. Each of them can provide numbers for the signal period in the entire operating range. The suspended proof-mass is encapsulated between two glass caps, which results in a three dimensional structure. The measured resonant frequency and quality factor (Q) are 13.2 Hz and 47, respectively. The calibration response of a ±0.7 g input acceleration is presented, and the accelerometer system presents a sensitivity of 122 V/g and a noise floor of 30 ng/√Hz (at 1 Hz, and 1 atm). The bias stability for a period of 10 h is 30 μg. The device has endured a shock up to ±2.6 g, and the full scale output appears to be approximately ±1.4 g presently. This work presents a new opportunity for highly sensitive MEMS fabrication to enable future high-precision measurement applications, such as for gravity measurements.
Keywords: MEMS; capacitive sensing system design; high resolution; high-precision measurement; large dynamic range; three dimensional (3D).