This paper reports the design and fabrication of capacitive silicon nanomechanical resonators with the selective vibration of a high-order mode. Fixed-fixed beam capacitive silicon resonators have been successfully produced by the use of electron beam lithography, photolithography, deep reactive ion etching, and anodic bonding methods. All resonators with different vibration modes are designed to have the same resonant frequency for performance comparison. Measurement results show that higher-order mode capacitive silicon resonators can achieve lower insertion loss compared to that of lower-order mode capacitive silicon resonators. The motional resistance of the fourth mode vibration resonator is improved by 83%, 90%, and 93% over the third, second, and first mode vibration resonators, respectively.
Keywords: and high-order mode; capacitive silicon resonator; nanomechanical resonator; selective vibration.