High performance tunnel field effect transistors based on in-plane transition metal dichalcogenide heterojunctions

Abstract

In-plane heterojunction tunnel field effect transistors based on monolayer transition metal dichalcogenides are studied by means of self-consistent non-equilibrium Green's functions simulations and an atomistic tight-binding Hamiltonian. We start by comparing several heterojunctions before focusing on the most promising ones, i.e. WTe₂-MoS₂ and MoTe₂-MoS₂. The scalability of those devices as a function of channel length is studied, and the influence of backgate voltages on device performance is analyzed. Our results indicate that, by fine-tuning the design parameters, those devices can yield extremely low subthreshold swings (<5 mV/decade) and I _ON/I _OFF ratios higher than 10⁸ at a supply voltage of 0.3 V, making them ideal for ultra-low power consumption.