Antiferromagnet-Based Spintronic Functionality by Controlling Isospin Domains in a Layered Perovskite Iridate

Adv Mater. 2018 Dec;30(52):e1805564. doi: 10.1002/adma.201805564. Epub 2018 Oct 29.

Abstract

The novel electronic state of the canted antiferromagnetic (AFM) insulator strontium iridate (Sr2 IrO4 ) is well described by the spin-orbit-entangled isospin Jeff = 1/2, but the role of isospin in transport phenomena remains poorly understood. In this study, antiferromagnet-based spintronic functionality is demonstrated by combining the unique characteristics of the isospin state in Sr2 IrO4 . Based on magnetic and transport measurements, a large and highly anisotropic magnetoresistance (AMR) is obtained by manipulating the AFM isospin domains. First-principles calculations suggest that electrons whose isospin directions are strongly coupled to the in-plane net magnetic moment encounter an isospin mismatch when moving across the AFM domain boundaries, which generates a high resistance state. By rotating a magnetic field that aligns in-plane net moments and removes domain boundaries, the macroscopically ordered isospins govern dynamic transport through the system, which leads to the extremely angle-sensitive AMR. As this work establishes a link between isospins and magnetotransport in strongly spin-orbit-coupled AFM Sr2 IrO4 , the peculiar AMR effect provides a beneficial foundation for fundamental and applied research on AFM spintronics.

Keywords: anisotropic magnetoresistance; antiferromagnetic spintronics; isospins; perovskite iridates.