Nb₂O₅ and Ti-Doped Nb₂O₅ Charge Trapping Nano-Layers Applied in Flash Memory

Jer Chyi Wang; Chyuan Haur Kao; Chien Hung Wu; Chun Fu Lin; Chih Ju Lin

doi:10.3390/nano8100799

Nb₂O₅ and Ti-Doped Nb₂O₅ Charge Trapping Nano-Layers Applied in Flash Memory

Nanomaterials (Basel). 2018 Oct 8;8(10):799. doi: 10.3390/nano8100799.

Authors

Jer Chyi Wang^{1

2

3}, Chyuan Haur Kao^{4

5

6}, Chien Hung Wu⁷, Chun Fu Lin⁸, Chih Ju Lin⁹

Affiliations

¹ Department of Electronic Engineering, Chang Gung University, Guishan Dist., Taoyuan 33302, Taiwan. jcwang@mail.cgu.edu.tw.
² Department of Neurosurgery, Chang Gung Memorial Hospital, Linkou, Guishan Dist., Taoyuan 33305, Taiwan. jcwang@mail.cgu.edu.tw.
³ Department of Electronic Engineering, Ming Chi University of Technology, Taishan Dist., New Taipei City 24301, Taiwan. jcwang@mail.cgu.edu.tw.
⁴ Department of Electronic Engineering, Chang Gung University, Guishan Dist., Taoyuan 33302, Taiwan. chkao@mail.cgu.edu.tw.
⁵ Department of Electronic Engineering, Ming Chi University of Technology, Taishan Dist., New Taipei City 24301, Taiwan. chkao@mail.cgu.edu.tw.
⁶ Kidney Research Center, Department of Nephrology, Chang Gung Memorial Hospital, Linkou, Guishan Dist., Taoyuan 33305, Taiwan. chkao@mail.cgu.edu.tw.
⁷ Department of Electronics Engineering, Chung Hua University, Hsin Chu City 30013, Taiwan. rossiwu@chu.edu.tw.
⁸ Department of Electronic Engineering, Chang Gung University, Guishan Dist., Taoyuan 33302, Taiwan. chiunfu0513@hotmail.com.
⁹ Department of Electronic Engineering, Chang Gung University, Guishan Dist., Taoyuan 33302, Taiwan. yankees0807@hotmail.com.

Abstract

High-k material charge trapping nano-layers in flash memory applications have faster program/erase speeds and better data retention because of larger conduction band offsets and higher dielectric constants. In addition, Ti-doped high-k materials can improve memory device performance, such as leakage current reduction, k-value enhancement, and breakdown voltage increase. In this study, the structural and electrical properties of different annealing temperatures on the Nb₂O₅ and Ti-doped Nb₂O₅(TiNb₂O₇) materials used as charge-trapping nano-layers in metal-oxide-high k-oxide-semiconductor (MOHOS)-type memory were investigated using X-ray diffraction (XRD) and atomic force microscopy (AFM). Analysis of the C-V hysteresis curve shows that the flat-band shift (∆V_FB) window of the TiNb₂O₇ charge-trapping nano-layer in a memory device can reach as high as 6.06 V. The larger memory window of the TiNb₂O₇ nano-layer is because of a better electrical and structural performance, compared to the Nb₂O₅ nano-layer.

Keywords: MOHOS memory; Ti-doped Nb2O5; charge trapping nano-layer.

Abstract

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