Fabrication of Sub-Micrometer-Sized MoS2 Thin-Film Transistor by Phase Mode AFM Lithography

Lianqing Liu; Jialin Shi; Meng Li; Peng Yu; Tie Yang; Guangyong Li

doi:10.1002/smll.201803273

Fabrication of Sub-Micrometer-Sized MoS₂ Thin-Film Transistor by Phase Mode AFM Lithography

Small. 2018 Dec;14(49):e1803273. doi: 10.1002/smll.201803273. Epub 2018 Sep 21.

Authors

Lianqing Liu¹, Jialin Shi¹, Meng Li^{1

2}, Peng Yu¹, Tie Yang¹, Guangyong Li³

Affiliations

¹ State Key Laboratory of Robotics, Shenyang Institute of Automation, Chinese Academy of Science, Shenyang, 110016, China.
² University of Chinese Academy of Science, Beijing, 100049, China.
³ Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA, 15213, USA.

PMID: 30239118
DOI: 10.1002/smll.201803273

Abstract

The phase mode atomic force microscopy (AFM) lithography and monolayer lift-off process are combined to fabricate electronics based on 2D materials (2DMs), which remove the need for pre-fabricating markers and increase the accuracy of the overlay and alignment. The promising phase mode of AFM lithography eliminates the drawbacks of the conventional force mode such as the over-cut, under-cut, debris effect, and severe tip wear. The planar size of MoS₂ thin-film transistors is shrunken down to sub-micrometer by the proposed method, and the fabricated devices demonstrate n-type characteristics. It offers a more flexible and easier way to fabricate prototypes of sub-micrometer-sized 2DMs based devices, and gives the opportunity to explore the size effect on the performance of 2DMs devices.

Keywords: AFM lithography; MoS2; TFT fabrication.

Abstract

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