Recently, an enhanced computer program was applied to explain in detail the influence of different recombination mechanisms (Auger, radiative, and Shockley-Read-Hall) on the performance of high-operation-temperature, long-wavelength, infrared p-i-n HgCdTe heterojunction photodiodes. It is shown that the photon recycling effect drastically limits the influence of radiative recombination on the performance of small pixel HgCdTe photodiodes. The computer program is based on a solution of the carrier transport equations, as well as the photon transport equations for semiconductor heterostructures. Both the distribution of thermal carrier generation and recombination rates, and spatial photon density distribution in photodiode structures have been obtained. In comparison with two previously published papers in the Journal of Electronics Materials [J. Electron. Mater.45, 4587 (2016)JECMA50361-523510.1007/s11664-016-4566-6 and J. Electron. Mater.46, 6295 (2017)JECMA50361-523510.1007/s11664-017-5736-x], our paper provides an additional insight on the ultimate performance of long-wavelength infrared, high-operation-temperature HgCdTe arrays with pixel densities that are fully consistent with background- and diffraction-limited performance due to system optics.