Carrier dynamics of InxGa1-xN/GaN multiple quantum wells grown on (-201) β-Ga2O3 for bright vertical light emitting diodes

Mufasila Mumthaz Muhammed; Jian Xu; Nimer Wehbe; Iman Salem Roqan

doi:10.1364/OE.26.014869

Carrier dynamics of In_xGa_1-xN/GaN multiple quantum wells grown on (-201) β-Ga₂O₃ for bright vertical light emitting diodes

Opt Express. 2018 Jun 11;26(12):14869-14878. doi: 10.1364/OE.26.014869.

Authors

Mufasila Mumthaz Muhammed, Jian Xu, Nimer Wehbe, Iman Salem Roqan

PMID: 30114792
DOI: 10.1364/OE.26.014869

Abstract

High-quality In_xGa_1-xN/GaN multi-quantum well (MQW) structures (0.05≤x≤0.13), are successfully grown on transparent and conductive (-201)-oriented β-Ga₂O₃ substrate. Scanning-transmission electron microscopy and secondary ion mass spectrometry (SIMS) show well-defined high quality MQWs, while the In and Ga compositions in the wells and the barriers are estimated by SIMS. Temperature-dependant Photoluminescence (PL) confirms high optical quality with a strong bandedge emission and negligble yellow band. time-resolved PL measurements (via above/below-GaN bandgap excitations) explain carrier dynamics, showing that the radiative recombination is predominant. Our results demonstrate that (-201)-oriented β-Ga₂O₃ is a strong candidate as a substrate for III-nitride-based vertical- emitting devices.