We investigate the interest of combined process of reactive ion etching (RIE) and dynamic chemical etching (DCE) as a final step after polishing to improve the laser damage resistance of fused silica optics at the wavelength of 355 nm. The investigation is carried out on the polished fused silica optics by changing the RIE depth while keeping the DCE depth fixed. We evidence that the combined etching process can effectively remove the damage precursors on the fused silica surface and thus improve its laser-induced damage threshold exceeding the level of the deep HF-etched surface. The effects of the combined etching depth on the surface roughness and surface error are also studied systematically. We show that the combined shallow etching can achieve better overall surface quality. Deeper etching will cause surface quality degradation of the fused silica optics, which is believed to be associated with the chemical etching during the combined process. Given that HF acid processing will degrade the surface quality of fused silica optics, the combined shallow etching appears as a pertinent alternative to HF-based deep etching.