Feasible Route for a Large Area Few-Layer MoS₂ with Magnetron Sputtering

Wei Zhong; Sunbin Deng; Kai Wang; Guijun Li; Guoyuan Li; Rongsheng Chen; Hoi-Sing Kwok

doi:10.3390/nano8080590

Feasible Route for a Large Area Few-Layer MoS₂ with Magnetron Sputtering

Nanomaterials (Basel). 2018 Aug 3;8(8):590. doi: 10.3390/nano8080590.

Authors

Wei Zhong¹, Sunbin Deng², Kai Wang³, Guijun Li⁴, Guoyuan Li⁵, Rongsheng Chen^{6

7}, Hoi-Sing Kwok⁷

Affiliations

¹ School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China. zwnice@163.com.
² State Key Laboratory on Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China. sdengaa@connect.ust.hk.
³ State Key Laboratory on Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China. kaiwjnu@163.com.
⁴ State Key Laboratory on Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China. gliad@connect.ust.hk.
⁵ School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China. phgyli@scut.edu.cn.
⁶ School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China. rschen@connect.ust.hk.
⁷ State Key Laboratory on Advanced Displays and Optoelectronics Technologies, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China. rschen@connect.ust.hk.

Abstract

In this article, we report continuous and large-area molybdenum disulfide (MoS₂) growth on a SiO₂/Si substrate by radio frequency magnetron sputtering (RFMS) combined with sulfurization. The MoS₂ film was synthesized using a two-step method. In the first step, a thin MoS₂ film was deposited by radio frequency (RF) magnetron sputtering at 400 °C with different sputtering powers. Following, the as-sputtered MoS₂ film was further subjected to the sulfurization process at 600 °C for 60 min. Sputtering combined with sulfurization is a viable route for large-area few-layer MoS₂ by controlling the radio-frequency magnetron sputtering power. A relatively simple growth strategy is demonstrated here that simultaneously enhances thin film quality physically and chemically. Few-layers of MoS₂ are established using Raman spectroscopy, X-ray diffractometer, high-resolution field emission transmission electron microscope, and X-ray photoelectron spectroscopy measurements. Spectroscopic and microscopic results reveal that these MoS₂ layers are of low disorder and well crystallized. Moreover, high quality few-layered MoS₂ on a large-area can be achieved by controlling the radio-frequency magnetron sputtering power.

Keywords: disorder; few-layer MoS2; magnetron sputtering; magnetron sputtering power; raman spectroscopy.