An ambipolar channel layer material is required to realize the potential benefits of ambipolar complementary metal-oxide-semiconductor field-effect transistors, namely their compact and efficient nature, reduced reverse power dissipation, and possible applicability to highly integrated circuits. Here, a ternary metal chalcogenide nanocrystal material, FeIn2S4, is introduced as a solution-processable ambipolar channel material for field-effect transistors (FETs). The highest occupied molecular orbital and the lowest unoccupied molecular orbital of the FeIn2S4 nanocrystals are determined to be -5.2 and -3.75 eV, respectively, based upon cyclic voltammetry, X-ray photoelectron spectroscopy, and diffraction reflectance spectroscopy analyses. An ambipolar FeIn2S4 FET is successfully fabricated with Au electrodes (EF = -5.1 eV), showing both electron mobility (14.96 cm2 V-1 s-1) and hole mobility (9.15 cm2 V-1 s-1) in a single channel layer, with an on/off current ratio of 105. This suggests that FeIn2S4 nanocrystals may be a promising alternative semiconducting material for next-generation integrated circuit development.
Keywords: ambipolar transistors; iron indium sulfide; nanocrystal field‐effect transistors.