GaN-based vertical-cavity surface-emitting lasers with AlInN/GaN distributed Bragg reflectors

Rep Prog Phys. 2019 Jan;82(1):012502. doi: 10.1088/1361-6633/aad3e9. Epub 2018 Jul 17.

Abstract

This paper describes the status and prospects of gallium nitride-based vertical-cavity surface-emitting lasers (VCSELs) with semiconductor-based distributed Bragg reflectors. These optoelectronic devices, which emit laser light from the violet to green region, are expected to be a superior light source for the next-generation of displays and illumination, such as retinal scanning displays and adaptive headlights. The development status and prospects are discussed in comparison with already commercialized gallium arsenide-based infrared VCSELs.

Publication types

  • Research Support, Non-U.S. Gov't