Interlayer electrical resistivity of rotated graphene layers studied by in-situ scanning electron microscopy

Abstract

Interlayer electrical transport between two-dimensional atomic crystals can be strongly modulated by the rotational misalignment between them. However, the experimental study on the interlayer electrical transport between rotated two-dimensional atomic crystals with variable rotation angles is challenging. Here, an in-situ scanning electron microscopy method is developed to study the interlayer electrical transport between rotated graphene layers. We employ nanoprobes installed in a scanning electron microscope to function as both "fingers" to induce interlayer rotation of a microfabricated metal-graphite-metal sandwiched island and also electrical probes to measure interlayer electrical resistivity of the rotated graphene layers. Interlayer electrical resistivity of the rotated graphene layers is found to increase monotonically by three orders of magnitude from ∼0.1 to ∼100 Ω cm when the rotational misalignment angle increases from 0° to 30°. This phenomenon can be well described by phonon-mediated electrical transport model. The large-magnitude tunability of interlayer electrical resistivity by mechanical rotation implies the potential applications of rotated graphene layers in nanoelectromechanical systems. Our results also provide a method for studying and tuning interlayer electrical transport between rotated two-dimensional atomic crystals.

Keywords: Graphene; In-situ scanning electron microscopy; Interlayer electrical resistivity.