Microwave Characterization of Ba-Substituted PZT and ZnO Thin Films

Davide Tierno; Matthijn Dekkers; Paul Wittendorp; Xiao Sun; Samuel C Bayer; Seth T King; Sven Van Elshocht; Marc Heyns; Iuliana P Radu; Christoph Adelmann

doi:10.1109/TUFFC.2018.2812424

Microwave Characterization of Ba-Substituted PZT and ZnO Thin Films

IEEE Trans Ultrason Ferroelectr Freq Control. 2018 May;65(5):881-888. doi: 10.1109/TUFFC.2018.2812424.

Authors

Davide Tierno, Matthijn Dekkers, Paul Wittendorp, Xiao Sun, Samuel C Bayer, Seth T King, Sven Van Elshocht, Marc Heyns, Iuliana P Radu, Christoph Adelmann

PMID: 29733290
DOI: 10.1109/TUFFC.2018.2812424

Abstract

The microwave dielectric properties of (Ba_0.1Pb_0.9)(Zr_0.52Ti_0.48)O₃ (BPZT) and ZnO thin films with thicknesses below were investigated. No significant dielectric relaxation was observed for both BPZT and ZnO up to 30 GHz. The intrinsic dielectric constant of BPZT was as high as 980 at 30 GHz. The absence of strong dielectric dispersion and loss peaks in the studied frequency range can be linked to the small grain diameters in these ultrathin films.

Publication types

Research Support, Non-U.S. Gov't