A transverse Bragg resonance (TBR) waveguide semiconductor laser with sampled grating is proposed and analyzed. The transverse phase shift in the middle of the grating is realized by shifting half of the sampling period, resulting in a good single transverse mode resonance. The characteristics such as the modal gain, the electric field distribution, the near and far field beam patterns are theoretically studied. Since the sampled grating is designed by combining a uniform basic grating with a micrometer scale sampling pattern, it can be easily fabricated by holographic exposure and conventional photolithography with low cost. Therefore, the proposed method would be beneficial to volume fabrication of wide-stripe high power semiconductor lasers.