Thiadizoloquinoxaline-Based N-Heteroacenes as Active Elements for High-Density Data-Storage Device

ACS Appl Mater Interfaces. 2018 May 9;10(18):15971-15979. doi: 10.1021/acsami.8b05178. Epub 2018 Apr 26.

Abstract

A novel thiadiazoloquinoxaline (TQ)-based donor-acceptor (D-A)-type N-heteroacene (Py-1-TQ) has been demonstrated for promising applications in organic multilevel resistive memory devices. Compared with its counterparts (Py-0-TQ and Py-2-TQ), which show flash-type binary memory behaviors, Py-1-TQ exhibits excellent nonvolatile write-once-read-many-times-type ternary memory effects with high ON2/ON1/OFF current ratios (105.8:103.4:1), which can be attributed to the different electron-withdrawing abilities between the pyrazine unit and TQ species that can induce stepwise D-A charge-transfer processes. These results suggest that TQ-based N-heteroacenes can be potentially useful in ultrahigh-density data-storage devices through the rational D-A tuning.

Keywords: N-heteroacenes; conjugation; donor−acceptor systems; multilevel resistive switching; nonvolatile memory.