Piezoelectric generators (PEGs) are a promising power source for future self-powered electronics by converting ubiquitous ambient mechanical energy into electricity. However, most of the high-output PEGs are made from lead zirconate titanate, in which the hazardous lead could be a potential risk to both humans and environment, limiting their real applications. III-Nitride (III-N) can be a potential candidate to make stable, safe, and efficient PEGs due to its high chemical stability and piezoelectricity. Also, PEGs are preferred to be flexible rather than rigid, to better harvest the low-magnitude mechanical energy. Herein, a high-output, lead-free, and flexible PEG (F-PEG) is made from GaN thin film by transferring a single-crystalline epitaxial layer from silicon substrate to a flexible substrate. The output voltage, current density, and power density can reach 28 V, 1 μA·cm-2, and 6 μW·cm-2, respectively, by bending the F-PEG. The generated electric power by human finger bending is high enough to light commercial visible light-emitting diodes and charge commercial capacitors. The output performance is maintained higher than 95% of its original value after 10 000-cycle test. This highly stable, high-output, and lead-free GaN thin-film F-PEG has the great potential for future self-powered electronic devices and systems.
Keywords: III-nitride; flexible; generator; piezoelectric; thin film.