Boosting Visible Light Absorption of Metal-Oxide-Based Phototransistors via Heterogeneous In-Ga-Zn-O and CH3NH3PbI3 Films

Young Jun Tak; Dong Jun Kim; Won-Gi Kim; Jin Hyeok Lee; Si Joon Kim; Jong Hak Kim; Hyun Jae Kim

doi:10.1021/acsami.8b01427

Boosting Visible Light Absorption of Metal-Oxide-Based Phototransistors via Heterogeneous In-Ga-Zn-O and CH₃NH₃PbI₃ Films

ACS Appl Mater Interfaces. 2018 Apr 18;10(15):12854-12861. doi: 10.1021/acsami.8b01427. Epub 2018 Apr 4.

Authors

Young Jun Tak, Dong Jun Kim, Won-Gi Kim, Jin Hyeok Lee, Si Joon Kim¹, Jong Hak Kim, Hyun Jae Kim

Affiliation

¹ Department of Materials Science and Engineering , The University of Texas at Dallas , 800 W. Campbell Road , Richardson , Texas 75080-3021 , United States.

PMID: 29578324
DOI: 10.1021/acsami.8b01427

Abstract

To broaden the availability and application of metal-oxide (M-O)-based optoelectronic devices, we suggest heterogeneous phototransistors composed of In-Ga-Zn-O (IGZO) and methylammonium lead iodide (CH₃NH₃PbI₃) layers, which act as the amplifier layer (channel layer) and absorption layer, respectively. These heterogeneous phototransistors showed low persistence photocurrent compared with IGZO-only phototransistors and exhibited high photoresponsivity of 61 A/W, photosensitivity of 3.48 × 10⁶, detectivity of 9.42 × 10¹⁰ Jones, external quantum efficiency of 154% in an optimized structure, and high photoresponsivity under water exposure via the deposition of silicon dioxide as a passivation layer. On the basis of these electrical results and various analyses, we determined that CH₃NH₃PbI₃ could be activated as a light absorption layer, current barrier, and plasma damage blocking layer, which would serve to widen the range of applications of M-O-based optoelectronic devices with high photoresponsivity and reliability under visible light illumination.

Keywords: CH3NH3PbI3; In−Ga−Zn−O; persistence photocurrent; photoresponsivity; photosensitivity; phototransistors.