In this contribution we demonstrate goniometric scatterometry measurements of gratings with linewidths down to 25 nm on silicon wafers with an inspection wavelength of 266 nm. For each sample, measurements have been performed in four different configurations and the obtained data have been evaluated in parallel. As results we present the reconstruction of the complete cross-section profile. We introduce a novel geometry parameterization which overcomes some limitations of the default parameterization. A co-variance analysis of the parameters is offered to indicate the soundness of the results. A qualitative comparison with cross-section scanning electron microscope (SEM) images shows excellent agreement.