Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons

Vikram Passi; Amit Gahoi; Boris V Senkovskiy; Danny Haberer; Felix R Fischer; Alexander Grüneis; Max C Lemme

doi:10.1021/acsami.8b01116

Field-Effect Transistors Based on Networks of Highly Aligned, Chemically Synthesized N = 7 Armchair Graphene Nanoribbons

ACS Appl Mater Interfaces. 2018 Mar 28;10(12):9900-9903. doi: 10.1021/acsami.8b01116. Epub 2018 Mar 13.

Authors

Vikram Passi¹, Amit Gahoi², Boris V Senkovskiy³, Danny Haberer⁴, Felix R Fischer⁴, Alexander Grüneis³, Max C Lemme^{1

2}

Affiliations

¹ AMO GmbH, Advanced Microelectronic Center Aachen , Otto-Blumenthal-Strasse 25 , Aachen , Germany.
² Chair of Electronic Devices , RWTH Aachen University , Otto-Blumenthal-Strasse 2 , Aachen , Germany.
³ II. Physikalisches Institut , Universität zu Köln , Zülpicher Strasse 77 , Köln , Germany.
⁴ Department of Chemistry , University of California Berkeley , Berkeley , California 94720 , United States.

Abstract

We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are fabricated from atomically precise and highly aligned 7-AGNRs, synthesized with a bottom-up approach. The large area transfer process holds the promise of scalable device fabrication with atomically precise nanoribbons. The channels of the FETs are approximately 30 times longer than the average nanoribbon length of 30 nm to 40 nm. The density of the GNRs is high, so that transport can be assumed well-above the percolation threshold. The long channel transistors exhibit a maximum I_ON/ I_OFF current ratio of 87.5.

Keywords: 7-AGNRs; back-gated field-effect transistors; bandgap; graphene nanoribbons; mobility.