Three dimensional-stacked complementary thin-film transistors using n-type Al:ZnO and p-type NiO thin-film transistors

Ching-Ting Lee; Chia-Chi Chen; Hsin-Ying Lee

doi:10.1038/s41598-018-22430-6

Three dimensional-stacked complementary thin-film transistors using n-type Al:ZnO and p-type NiO thin-film transistors

Sci Rep. 2018 Mar 5;8(1):3968. doi: 10.1038/s41598-018-22430-6.

Authors

Ching-Ting Lee^{1

2}, Chia-Chi Chen³, Hsin-Ying Lee⁴

Affiliations

¹ Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, 701, Taiwan, Republic of China. ctlee@ee.ncku.edu.tw.
² Department of Photonics Engineering, Yuan Ze University, Taoyuan 320, Taiwan, Republic of China. ctlee@ee.ncku.edu.tw.
³ Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, 701, Taiwan, Republic of China.
⁴ Department of Photonics, National Cheng Kung University, Tainan 701, Taiwan, Republic of China.

Abstract

The three dimensional inverters were fabricated using novel complementary structure of stacked bottom n-type aluminum-doped zinc oxide (Al:ZnO) thin-film transistor and top p-type nickel oxide (NiO) thin-film transistor. When the inverter operated at the direct voltage (V_DD) of 10 V and the input voltage from 0 V to 10 V, the obtained high performances included the output swing of 9.9 V, the high noise margin of 2.7 V, and the low noise margin of 2.2 V. Furthermore, the high performances of unskenwed inverter were demonstrated by using the novel complementary structure of the stacked n-type Al:ZnO thin-film transistor and p-type nickel oxide (NiO) thin-film transistor.