Solvent-Assisted Thermal-Pressure Strategy for Constructing High-Quality CH3NH3PbI3- xCl x Films as High-Performance Perovskite Photodetectors

Ning Dong; Xianwei Fu; Gang Lian; Song Lv; Qilong Wang; Deliang Cui; Ching-Ping Wong

doi:10.1021/acsami.8b00425

Solvent-Assisted Thermal-Pressure Strategy for Constructing High-Quality CH₃NH₃PbI_{3- x}Cl _x Films as High-Performance Perovskite Photodetectors

ACS Appl Mater Interfaces. 2018 Mar 14;10(10):8393-8398. doi: 10.1021/acsami.8b00425. Epub 2018 Mar 5.

Authors

Ning Dong¹, Xianwei Fu¹, Gang Lian^{1

2}, Song Lv¹, Qilong Wang³, Deliang Cui¹, Ching-Ping Wong²

Affiliations

¹ State Key Lab of Crystal Materials, Shandong University , Jinan 250100 , P.R. China.
² School of Materials Science and Engineering , Georgia Institute of Technology , Atlanta , Georgia 30332 , United States.
³ Key Laboratory for Special Functional Aggregated Materials of Education Ministry, School of Chemistry & Chemical Engineering , Shandong University , Jinan 250100 , P.R. China.

PMID: 29488378
DOI: 10.1021/acsami.8b00425

Abstract

High-quality CH₃NH₃PbI_3-xCl _x films have attracted research interests in photoelectric devices because of their improved carrier diffusion length and charge mobility. Herein, a solvent-assisted thermal-pressure strategy is developed to promote the secondary growth of perovskite grains in the films. Highly oriented perovskite films are then obtained with large-sized grains (5-10 μm). As a consequence, the photodetectors based on the high-quality CH₃NH₃PbI_{3- x}Cl _x films exhibit enhanced ophtoelectrical performance, including high on/off ratio (>2.1 × 10⁴), fast response time (54/63 μs), and high detectivity (∼1.3 × 10¹²). This work suggests an effective approach for high-quality perovskite films, which will be promising candidates for other high-efficiency photoelectric devices.

Keywords: CH3NH3PbI3-xClx; large-sized grains; photodetectors; solvent engineering; thermal pressure.