Universal Scaling of Intrinsic Resistivity in Two-Dimensional Metallic Borophene

Jin Zhang; Jia Zhang; Liujiang Zhou; Cai Cheng; Chao Lian; Jian Liu; Sergei Tretiak; Johannes Lischner; Feliciano Giustino; Sheng Meng

doi:10.1002/anie.201800087

Universal Scaling of Intrinsic Resistivity in Two-Dimensional Metallic Borophene

Angew Chem Int Ed Engl. 2018 Apr 16;57(17):4585-4589. doi: 10.1002/anie.201800087. Epub 2018 Mar 14.

Authors

Jin Zhang^{1

2}, Jia Zhang^{1

2}, Liujiang Zhou³, Cai Cheng^{1

2}, Chao Lian^{1

2}, Jian Liu^{1

2}, Sergei Tretiak³, Johannes Lischner⁴, Feliciano Giustino⁵, Sheng Meng^{1

2}

Affiliations

¹ Beijing National Laboratory for Condensed Matter Physics, Institute of Physics Chinese Academy of Sciences, Beijing, 100190, P. R. China.
² School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
³ Theoretical Division, Center for Nonlinear Studies and Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA.
⁴ Departments of Materials, Physics, and the Thomas Young Centre for Theory and Simulation of Materials, Imperial College London, London, SW7 2AZ, UK.
⁵ Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK.

PMID: 29485742
DOI: 10.1002/anie.201800087

Abstract

Two-dimensional boron sheets (borophenes) have been successfully synthesized in experiments and are expected to exhibit intriguing transport properties. A comprehensive first-principles study is reported of the intrinsic electrical resistivity of emerging borophene structures. The resistivity is highly dependent on different polymorphs and electron densities of borophene. Interestingly, a universal behavior of the intrinsic resistivity is well-described using the Bloch-Grüneisen model. In contrast to graphene and conventional metals, the intrinsic resistivity of borophenes can be easily tuned by adjusting carrier densities, while the Bloch-Grüneisen temperature is nearly fixed at 100 K. This work suggests that monolayer boron can serve as intriguing platform for realizing tunable two-dimensional electronic devices.

Keywords: Bloch-Grüneisen model; borophene; electron-phonon coupling; intrinsic electrical resistivity.

Publication types

Research Support, Non-U.S. Gov't