Manganese2+-Doped Copper Tin Telluride Absorber Layer-Sensitized Solar Cells

Panupong Sangsuriyawong; Auttasit Tubtimtae; Veeramol Vailikhit; Pichanan Teesetsopon; Supab Choopun

doi:10.1166/jnn.2018.15224

Manganese²⁺-Doped Copper Tin Telluride Absorber Layer-Sensitized Solar Cells

J Nanosci Nanotechnol. 2018 Jun 1;18(6):4343-4348. doi: 10.1166/jnn.2018.15224.

Authors

Panupong Sangsuriyawong¹, Auttasit Tubtimtae¹, Veeramol Vailikhit², Pichanan Teesetsopon³, Supab Choopun⁴

Affiliations

¹ Department of Physics, Faculty of Liberal Arts and Science, Kasetsart University, Kamphaeng Saen Campus, Nakhon Pathom 73140, Thailand.
² Department of Chemistry, Faculty of Liberal Arts and Science, Kasetsart University, Kamphaeng Saen Campus, Nakhon Pathom 73140, Thailand.
³ Department of Physics, Faculty of Science, King Mongkut's Institute of Technology, Ladkrabang, Bangkok 10520, Thailand.
⁴ Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200, Thailand.

PMID: 29442785
DOI: 10.1166/jnn.2018.15224

Abstract

Manganese2+-doped copper tin telluride nanoparticles (Mn2+:Cu2SnTe3 NPs), as an absorber layer, were grown using a chemical bath deposition (CBD) technique and demonstrated for solar cell applications. The cubical structure was formed on the WO3 surface with the band gap (Eg) of Cu2SnTe3 NPs decreased from 1.80 to 1.67 eV after Mn2+ doping. The photovoltaic property at 1 sun shows the efficiency (η) of 0.276%. The η was increased with reducing sunlight intensity due to the lower carrier recombination process at an electrode and electrolyte interface, which leads to the increasing η. The highest η of 1.120% was yielded at 0.1 sun with a Jsc = 2.81 mA/cm2, a Voc = 0.148 V, a FF = 26.8%. It can be noted that this kind of material and a synthesis procedure can be feasibly further improved for a higher efficiency and more stability on an absorber layer.