Designing high-quality interfaces is crucial for high-performance photoelectrochemical (PEC) water-splitting devices. Here, we demonstrate a facile integration between polycrystalline n+p-Si and NiFe-layered double hydroxide (LDH) nanosheet array by a partially activated Ni (Ni/NiOx) bridging layer for the excellent PEC water oxidation. In this model system, the thermally deposited Ni interlayer protects Si against corrosion and makes good contact with Si, and NiOx has a high capacity of hole accumulation and strong bonding with the electrodeposited NiFe-LDH due to the similarity in material composition and structure, facilitating transfer of accumulated holes to the catalyst. In addition, the back illumination configuration makes NiFe-LDH sufficiently thick for more catalytically active sites without compromising Si light absorption. This earth-abundant multicomponent photoanode affords the PEC performance with an onset potential of ∼0.78 V versus reversible hydrogen electrode (RHE), a photocurrent density of ∼37 mA cm-2 at 1.23 V versus RHE, and retains good stability in 1.0 M KOH, the highest water oxidation activity so far reported for the crystalline Si-based photoanodes. This bridging layer strategy is efficient and simple to smooth charge transfer and make robust contact at the semiconductor/electrocatalyst interface in the solar water-splitting systems.
Keywords: NiFe-layered double hydroxide; Si-based photoanode; Water oxidation; device integration; interfacial engineering; transition metal catalyst.