Image sticking in thin film transistor-liquid crystal displays (TFT-LCD) is related to the dielectric property of liquid crystal (LC) material. Low threshold value TFT LC materials have a weak stability and the free ions in them will be increased because of their own decomposition. In this study, the property of TFT LC material MAT-09-1284 doped with γ-Fe₂O₃ nanoparticles was investigated. The capacitances of parallel-aligned nematic LC cells and vertically aligned nematic LC cells with different doping concentrations were measured at different temperatures and frequencies. The dielectric constants perpendicular and parallel to long axis of the LC molecules ε⊥ and ε//, as well as the dielectric anisotropy Δε, were obtained. The dynamic responses and the direct current threshold voltages in parallel-aligned nematic LC cells for different doping concentrations were also measured. Although the dielectric anisotropy Δε decreased gradually with increasing temperature and frequency at the certain frequency and temperature in LC state for each concentration, the doping concentration of γ-Fe₂O₃ nanoparticles less than or equal to 0.145 wt % should be selected for maintaining dynamic response and decreasing free ions. This study has some guiding significance for improving the image sticking in TFT-LCD.
Keywords: capacitance model; dielectric property; dynamic response; image sticking; liquid crystal; threshold voltage; γ-Fe2O3 nanoparticles.